CNY17F-2 Ver la hoja de datos (PDF) - Infineon Technologies
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CNY17F-2 Datasheet PDF : 4 Pages
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CNY17F
No Base Connection
Phototransistor Optocoupler
• FEATURES
• High Current Transfer Ratio
CNY17F-1, 40-80%
CNY17F-2, 63-125%
CNY17F-3, 100-200%
CNY17F-4, 160-320%
• Breakdown Voltage, 5300 VRMS
• High Collector-Emitter Voltage
• VCEO=70 V
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS—TRansparent
IOn Shield
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
•
V
DE
VDE #0884, Available with Option 1
Maximum Ratings TA=25°C
Emitter
Reverse Voltage ............................................... 6.0 V
DC Forward Current ...................................... 60 mA
Surge Forward Current (t ≤10 µs)..................... 2.5 A
Total Power Dissipation ............................... 100 mW
Detector
Collector-Emitter Breakdown Voltage................ 70 V
Collector Current ............................................ 50 mA
Collector Current (t≤1.0 ms) ......................... 100 mA
Total Power Dissipation ............................... 150 mW
Package
Isolation Test Voltage (between emitter
and detector referred to standard
climate 23/50 DIN 50014) .................... 5300 VRMS
Creepage .................................................. ≥7.0 mm
Clearance .................................................. ≥7.0 mm
Isolation Thickness between Emitter
and Detector .......................................... ≥0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ....................... 175
Isolation Resistance (VIO=500 V) ............... ≥1011 Ω
Storage Temperature Range ............. –55 to +150°C
Ambient Temperature Range ............ –55 to +100°C
Junction Temperature..................................... 100°C
Soldering Temperature
(max. 10 s, dip soldering:
distance to seating plane ≥1.5 mm) ........... 260°C
Dimensions in inches (mm)
321
pin one ID
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Anode 1
6 Base
4 56
.335 (8.50)
.343 (8.70)
.048 (0.45)
.022 (0.55)
Cathode 2
NC 3
5 Collector
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
DESCRIPTION
The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared
emitting diode optically coupled to a silicon planar phototransistor detec-
tor in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two electrically
separated circuits. The potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible reference voltages.
In contrast to the CNY17 Series, the base terminal of the F type is not con-
nected, resulting in a substantially improved common-mode interference
immunity.
Characteristics TA=25°C
Parameter
Symbol Value
Unit Condition
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
VF
VBR
IR
CO
RthJA
1.25 (≤1.65) V
≥6.0
0.01 (≤10) µA
25
pF
750
K/W
IF=60 mA
IR=10 µA
VR=6.0 V
VR=0 V, f=1.0 MHz
—
Capacitance
CCE
5.2
CBC
6.5
CEB
7.5
Thermal Resistance RthJA
500
Package
pF
VCE=5.0 V,
f=1.0 MHz
K/W —
Saturation Voltage,
Collector-Emitter
Coupling
Capacitance
VCEsat
CC
0.25 (≤0.4) V
0.6
pF
IF=10 mA
IC=2.5 mA
—
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
March 17, 2000-13
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