BPW16N Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BPW16N Datasheet PDF : 5 Pages
| |||
www.vishay.com
125
100
75
RthJA = 450 K/W
50
25
0
0
94 8308
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BPW16N
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
IC = 1 mA
V(BR)CEO
32
Collector emitter dark current
VCE = 20 V, E = 0
ICEO
Collector emitter capacitance
Collector light current
Angle of half sensitivity
VCE = 5 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
CCEO
Ica
ϕ
0.07
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.01 mA
VS = 5 V, IC = 5 mA, RL = 100 Ω
λp
λ0.1
VCEsat
ton
Turn-off time
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
toff
VS = 5 V, IC = 5 mA, RL = 100 Ω
fc
TYP.
1
8
0.14
± 40
825
450 to 1040
4.8
5.0
120
MAX.
200
0.3
UNIT
V
nA
pF
mA
deg
nm
nm
V
μs
μs
kHz
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
104
103
VCE = 20 V
102
101
100
20
40
60
80
100
94 8235
Tamb - Ambient Temperature (°C)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
VCE = 5 V
1.6
Ee = 1 mW/cm2
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
94 8239
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Rev. 1.8, 24-Aug-11
2
Document Number: 81515
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 