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Número de pieza
componentes Descripción
2SJ449 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
2SJ449
MOS FIELD EFFECT TRANSISTOR
NEC => Renesas Technology
2SJ449 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
–100
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
–10
I
D
= –6 A
–1.0
E
AS
= 180 mJ
V
DD
= –125 V
V
GS
= –20 V
→
0
–0.1
R
G
= 25
Ω
100
µ
1m
10 m
L - Inductive Load - H
100 m
2SJ449
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
V
DD
= –125 V
140
R
G
= 25
Ω
120
IV
AGSS
<==––62A0 V
→
0
100
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6
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