MBM29PL3200TE Ver la hoja de datos (PDF) - Fujitsu

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MBM29PL3200TE

PAGE MODE FLASH MEMORY CMOS 32 M (2 M × 16/1 M × 32) BIT

Fujitsu 

MBM29PL3200TE/BE70/90

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DW : Double Word

W : Word

*1: This command is valid while Fast Mode.

*2: The valid addresses are A6 to A0.

*3: This command is valid while Hi-ROM mode.

*4: The data “00h” is also acceptable.

Notes : 1.Address bits A19 to A11 = X = “H” or “L” for all address commands except or Program Address (PA), and

Sector Address (SA).

2.Bus operations are defined in Tables 2 and 3.

3.RA = Address of the memory location to be read

PA = Address of the memory location to be programmed

Addresses are latched on the falling edge of the write pulse.

SA = Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13 and A12

will uniquely select any sector.

4.RD = Data read from location RA during read operation.

PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse.

5.HRA = Address of the Hi-ROM area Word Mode : 000000h to 000100h

Double Word Mode : 000000h to 000080h

6.The system should generate the following address patterns :

DW (Double Word) Mode : 555h or 2AAh to addresses A10 to A0

W (Word) Mode : AAAh or 555h to addresses A10 to A0, and A-1

7.Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

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