UPG2110TB-E3(2002) Ver la hoja de datos (PDF) - NEC => Renesas Technology
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UPG2110TB-E3 Datasheet PDF : 12 Pages
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µPG2106TB,µPG2110TB
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
µPG2106TB
OUTPUT POWER, CIRCUIT CURRENT,
ADJACENT CHANNEL POWER LEAKAGE
vs. INPUT POWER
45
30
f = 925 MHz,
40 VDD1 = VDD2 = 3.0 V,
20
VAGC = 2.5 V
35
10
IDD
30
0
25
–10
20
–20
Pout
15
–30
10
–40
Padj1
5
–50
0
–60
–5
–35 –30 –25 –20 –15 –10
–70
–5
Input Power Pin (dBm)
POWER GAIN vs. GAIN CONTROL VOLTAGE
40
f = 925 MHz,
VDD1 = VDD2 = 3.0 V
30
20
10
0
–10
–20
–30
0
0.5 1.0 1.5 2.0 2.5 3.0
Gain Control Voltage VAGC (V)
µPG2110TB
OUTPUT POWER, CIRCUIT CURRENT,
ADJACENT CHANNEL POWER LEAKAGE
vs. INPUT POWER
30
0
25
–10
IDD
20
–20
15
–30
Pout
10
–40
Padj1
5
–50
0
f = 1 441 MHz,
–60
VDD1 = VDD2 = 3.0 V,
VAGC = 2.5 V
–5
–35 –30 –25 –20 –15 –10 –5
–70
0
Input Power Pin (dBm)
POWER GAIN vs. GAIN CONTROL VOLTAGE
40
f = 1 441 MHz,
30 VDD1 = VDD2 = 3.0 V
20
10
0
–10
–20
–30
0
0.5 1.0 1.5 2.0 2.5 3.0
Gain Control Voltage VAGC (V)
Remark The graphs indicate nominal characteristics.
8
Data Sheet PG10168EJ01V0DS
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