FX603 Ver la hoja de datos (PDF) - SANYO -> Panasonic
Número de pieza
componentes Descripción
Fabricante
FX603 Datasheet PDF : 3 Pages
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Ordering number:EN5264
FX203
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
Switching Time Test CIrcuit
Package Dimensions
unit:mm
2121
[FX203]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C
Mounted on ceramic board (750mm2×0.8mm)
Parameter
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
· Marking:203
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, I D=–1mA
VDS=–10V, I D=–2A
ID=–2A, VGS=–10V
ID=–2A, VGS=–4V
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=–4A, VGS=0
1:No Contact
2:Gate
3:Source
4:No Contact
5:Drain
6:Drain
SANYO:XP5
(Bottom view)
Ratings
Unit
–30 V
±20 V
–4 A
–16 A
8W
2W
150 ˚C
–55 to +150 ˚C
Ratings
Unit
min
typ
max
–30
V
–100 µA
±10 µA
–1.0
–2.5 V
1.5
3
S
120 160 mΩ
210 290 mΩ
370
pF
230
pF
70
pF
10
ns
50
ns
135
ns
125
ns
–1.0 –1.2 V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/O2196YK (KOTO) TA-0041 No.5264-1/3
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