FDG316P Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDG316P Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
10
ID = -1.6A
8
6
VDS = 5V
10V
15V
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
250
f = 1MHz
VGS = 0 V
200
CISS
150
100
50
0
0
COSS
CRSS
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
10
RDS(ON) LIMIT
1ms
10ms
1
100ms
1s
10s
DC
0.1
VGS = -10V
SINGLE PULSE
RθJA = 260oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
30
SINGLE PULSE
24
RθJA= 260oC/W
TA= 25oC
18
12
6
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.01
0.1
0.05
0.01
0.02
Single Pulse
0.005
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA =260°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1/ t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDG316P Rev. D
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