STB80PF55 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STB80PF55

P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB80PF55, STP80PF55

Electrical characteristics

Note:

Table 7. Source drain diode

Symbol

Parameter

Test condictions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 80 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80 A, di/dt = 100 A/µs -

VDD = 25 V, Tj =150 °C

1. Pulse width limited by Tjmax .

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

10 A

40 A

1.6 V

110

ns

495

µC

9

A

For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Doc ID 8177 Rev 6

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