CNY65EXI(1999) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
CNY65EXI Datasheet PDF : 7 Pages
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Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward Current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp ≤ 10 ms
Tamb ≤ 25°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test Conditions
tp/T = 0.5, tp ≤ 10 ms
Tamb ≤ 25°C
Coupler
Parameter
DC isolation test voltage
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Test Conditions
t = 1 min
Tamb ≤ 25°C
2 mm from case, t ≤ 10 s
CNY65Exi
Vishay Telefunken
Symbol
Value
Unit
VR
IF
IFSM
PV
Tj
5
V
75
mA
1.5
A
120
mW
100
°C
Symbol
Value
Unit
VCEO
VECO
IC
ICM
PV
Tj
32
V
7
V
50
mA
100
mA
130
mW
100
°C
Symbol
Value
Unit
VIO
Ptot
Tamb
Tstg
Tsd
11.6
kV
250
mW
–55 to +85
°C
–55 to +100 °C
260
°C
Rev. A3, 11–Jan–99
127
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