3NV04D Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

3NV04D

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics 

VNS3NV04D

ABSOLUTE MAXIMUM RATING

Symbol

VDSn

VINn

IINn

RIN MINn

IDn

IRn

VESD1

VESD2

Ptot

Tj

Tc

Tstg

Parameter

Drain-source Voltage (VINn=0V)

Input Voltage

Input Current

Minimum Input Series Impedance

Drain Current

Reverse DC Output Current

Electrostatic Discharge (R=1.5KΩ, C=100pF)

Electrostatic Discharge on output pins only (R=330Ω, C=150pF)

Total Dissipation at Tc=25°C

Operating Junction Temperature

Case Operating Temperature

Storage Temperature

CONNECTION DIAGRAM (TOP VIEW)

Value

Internally Clamped

Internally Clamped

+/-20

220

Internally Limited

-5.5

4000

16500

4

Internally limited

Internally limited

-55 to 150

Unit

V

V

mA

Ω

A

A

V

V

W

°C

°C

°C

SOURCE 1 1

INPUT 1

SOURCE 2

INPUT 2

4

8

DRAIN 1

DRAIN 1

DRAIN 2

5

DRAIN 2

CURRENT AND VOLTAGE CONVENTIONS

IIN1

RIN1

VIN1

IIN2

VIN2

RIN2

INPUT 1

INPUT 2

SOURCE 1

DRAIN 1

DRAIN 2

SOURCE 2

ID1

ID2

VDS1

VDS1

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