PHP1025 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
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Fabricante
PHP1025 Datasheet PDF : 8 Pages
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Philips Semiconductors
P-channel enhancement mode
MOS transistor
Objective specification
PHP1025
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)DSS
VGSth
IDSS
IGSS
RDSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
QG
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Switching times
VGS = 0; ID = −10 µA
VGS = VDS; ID = −1 mA
VGS = 0; VDS = −9.6 V
VGS = ±8 V; VDS = 0
VGS = −4.5 V; ID = −5 A
VGS = −2.5 V; ID = −5 A
VGS = −1.8 V; ID = −2.5 A
VGS = 0; VDS = −9.6 V; f = 1 MHz
VGS = 0; VDS = −9.6 V; f = 1 MHz
VGS = 0; VDS = −9.6 V; f = 1 MHz
VGS = −6 V; VDD = −6 V;
ID = −5 A; Tamb = 25 °C
VDD = −6 V; ID = −5 A
Tamb = 25 °C
VDD = −6 V; ID = −5 A
Tamb = 25 °C
−12
−0.4
−
−
−
−
−
−
−
−
−
−
−
td(on)
tf
ton
td(off)
tr
toff
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
Source-drain diode
VGS = 0 to −6 V; VDD = −6 V;
−
ID = −1 A; Rgen = 6 Ω
−
−
VGS = −6 to 0 V; VDD = −6 V;
−
ID = −1 A; Rgen = 6 Ω
−
−
VSD
source-drain diode forward voltage VGD = 0; IS = −1.25 A
−
trr
reverse recovery time
IS = −1.25 A; di/dt = 100 A/µs
−
TYP.
−
−
−
−
−
−
−
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
tbf
−
tbf
MAX.
−
−
−100
±100
23
25
29
−
−
−
−
−
−
−
−
−
−
−
−
−1.3
−
UNIT
V
V
nA
nA
mΩ
mΩ
mΩ
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
ns
ns
V
ns
1998 Feb 18
4
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