PHP1025 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PHP1025 Datasheet PDF : 8 Pages
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Philips Semiconductors
P-channel enhancement mode
MOS transistor
Objective specification
PHP1025
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
VGSO
ID
IDM
Ptot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
IS
source current (DC)
ISM
peak pulsed source current
CONDITIONS
open drain
Ts = 80 °C; note 1
note 2
Ts = 80 °C
Tamb = 25 °C; note 3
Tamb = 25 °C; note 4
Ts = 80 °C
note 2
MIN.
−
−
−
−
−
−
−
−55
−55
−
−
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W.
MAX.
−12
±8
−10
−40
4
2.78
1.16
+150
+150
UNIT
V
V
A
A
W
W
W
°C
°C
−3
A
−12
A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
17.5
UNIT
K/W
1998 Feb 18
3
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