PUMZ1 Ver la hoja de datos (PDF) - Philips Electronics
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PUMZ1 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN/PNP general purpose transistors
Preliminary specification
PUMZ1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per device
Rth j-a
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per transistor; for the PNP transistor with negative polarity
ICBO
IEBO
hFE
VCEsat
Cc
collector cut-off current
IE = 0; VCB = 30 V
−
IE = 0; VCB = 30 V; Tj = 150 °C
−
emitter cut-off current
IC = 0; VEB = 4 V
−
DC current gain
IC = 1 mA; VCE = 6 V
120
collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1
−
collector capacitance
IE = ie = 0; VCB = 12 V; f = 1 MHz
TR1
−
TR2
−
fT
transition frequency
IC = 2 mA; VCE = 12 V; f = 100 MHz 100
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX. UNIT
100
nA
10
µA
100
nA
−
200
mV
1.5
pF
2.2
pF
−
MHz
1999 Apr 14
3
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