PUMZ1 Ver la hoja de datos (PDF) - Philips Electronics
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PUMZ1 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN/PNP general purpose transistors
Preliminary specification
PUMZ1
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Reduces number of components and boardspace.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
Two independently operating NPN/PNP transistors in an
SC-88 plastic package.
MARKING
TYPE NUMBER
PUMZ1
MARKING CODE
FtZ
PINNING
PIN
1, 4
2, 5
3, 6
emitter
base
collector
DESCRIPTION
TR2; TR1
TR2; TR1
TR2; TR1
handbook, halfpage
654
65 4
TR2
TR1
12 3
Top view
123
MAM341
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
50
V
−
40
V
−
5
V
−
100
mA
−
200
mA
−
200
mA
−
200
mW
−65
+150
°C
−
150
°C
−65
+150
°C
−
300
mW
1999 Apr 14
2
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