S9015 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

S9015

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-50

IB = -400 uA

-40

IB = -350 uA

IB = -300 uA

-30

IB = -250 uA

IB = -200 uA

-20

IB = -150 uA

IB = -100 uA

-10

IB = -50 uA

-0

-0

-2

-4

-6

-8 -10 -12 -14 -16 -18 -20

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-1000

VBE (sat)

-100

VCE (sat)

-10

-0.1

IC = 20 IB

-1

-10

-100

Ic [mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

f = 1 MHz

IE = 0

10

-1000

-100

VCE = -5V

-10

-0.1

-1

-10

-100

IC [mA], COLLECTOR CURRENT

-1000

Figure 2. DC current Gain

-100

VCE = -5V

-10

-1

-0.1

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE [V], BASE-EMITTER VOLTAGE

Figure 4. Base-Emitter On Voltage

1000

VCE = -6V

100

1

-1

-10

-100

VCB [V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance

©2000 Fairchild Semiconductor International

10

-1

-10

IC [mA], COLLECTOR CURRENT

Figure 6. Current Gian Bandwidth Product

Rev. A, February 2000

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