PH2222 Ver la hoja de datos (PDF) - Philips Electronics
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PH2222 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
PH2222A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
Ce
fT
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
MIN.
IE = 0; VCB = 60 V
−
IE = 0; VCB = 60 V; Tamb = 150 °C
−
IC = 0; VEB = 3 V
−
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35
IC = 150 mA; VCE = 1 V; note 1
50
IC = 150 mA; VCE = 10 V; note 1
100
IC = 500 mA; VCE = 10 V; note 1
40
IC = 150 mA; IB = 15 mA; note 1
−
IC = 500 mA; IB = 50 mA; note 1
−
IC = 150 mA; IB = 15 mA; note 1
0.6
IC = 500 mA; IB = 50 mA; note 1
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
IC = 20 mA; VCE = 20 V; f = 100 MHz 300
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
−
f = 1 kHz; B = 200 Hz
MAX. UNIT
10
nA
10
µA
10
nA
−
−
−
−
−
300
−
300 mV
1
V
1.2 V
2
V
8
pF
25
pF
−
MHz
4
db
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
−
35
ns
−
15
ns
−
20
ns
−
250 ns
−
200 ns
−
60
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 27
3
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