FJN13003 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FJN13003 Datasheet PDF : 5 Pages
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FJN13003
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Electronic Ballast up to 21W
1
TO-92
1. Emitter 2. Collector 3.Base
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
IBP
*Base Current (Pulse)
PC
Collector Power Dissipation(Ta=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Value
700
400
9
1.5
3
0.75
1.5
1.1
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
tON
tSTG
tF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Test Condition
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VEB=9V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=1.0A
IC=0.5A, IB=0.1A
IC=1.0A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1.0A, IB=0.25A
VCE=10V, IC=0.1A
VCC=125V, IC=1A,
IB1=0.2A, IB2=-0.2A,
RL = 125Ω
Min.
700
400
9
9
5
4
Typ.
Max.
10
21
Units
V
V
V
µA
0.5
V
1.0
V
3.0
V
1.0
V
1.2
V
MHz
1.1
µs
4.0
µs
0.7
µs
©2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
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