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BUL45

POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

Motorola => Freescale 

BUL45 BUL45F

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)

(IC = 2.0 Adc, IB = 0.4 Adc)

VBE(sat)

—

—

Collector–Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

VCE(sat)

—

(TC = 125°C)

—

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.4 Adc)

VCE(sat)

—

(TC = 125°C)

—

DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)

DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

14

(TC = 125°C)

—

7.0

(TC = 125°C)

5.0

10

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

Input Capacitance (VEB = 8.0 Vdc)

Cib

—

Dynamic Saturation Voltage:

(IC = 1.0 Adc

1.0 µs (TC = 125°C)

—

—

Determined 1.0 µs and

IB1 = 100 mAdc

3.0 µs respectively after

rising IB1 reaches 90%

VCC = 300 V)

3.0 µs (TC = 125°C)

VCE

—

—

of final IB1

(see Figure 18)

(IC = 2.0 Adc

1.0 µs (TC = 125°C)

(Dyn sat)

—

—

IB1 = 400 mAdc

VCC = 300 V)

3.0 µs (TC = 125°C)

—

—

SWITCHING CHARACTERISTICS: Resistive Load

Turn–On Time

(IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc

ton

—

Pulse Width = 20 µs,

(TC = 125°C)

—

Duty Cycle < 20%

Turn–Off Time

VCC = 300 V)

toff

—

(TC = 125°C)

—

SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 µH, Vclamp = 300 Vdc)

Fall Time

(IC = 2.0 Adc, IB1 = 0.4 Adc

tfi

70

IB2 = 0.4 Adc)

(TC = 125°C)

—

Storage Time

tsi

2.6

(TC = 125°C)

—

Crossover Time

tc

—

(TC = 125°C)

—

Fall Time

(IC = 1.0 Adc, IB1 = 100 mAdc

tfi

—

IB2 = 0.5 Adc)

(TC = 125°C)

—

Storage Time

tsi

—

(TC = 125°C)

—

Crossover Time

tc

—

(TC = 125°C)

—

Fall Time

(IC = 2.0 Adc, IB1 = 250 mAdc

tfi

—

IB2 = 2.0 Adc)

(TC = 125°C)

Storage Time

tsi

—

(TC = 125°C)

Crossover Time

tc

—

(TC = 125°C)

Typ

0.84

0.89

0.175

0.150

0.25

0.275

—

32

14

12

22

12

50

920

1.75

4.4

0.5

1.0

1.85

6.0

0.5

1.0

75

120

2.8

3.5

—

200

—

4.2

230

400

110

100

1.1

1.5

170

170

80

0.6

175

Max

1.2

1.25

0.25

—

0.4

—

34

—

—

—

—

—

75

1200

—

—

—

—

—

—

—

—

110

—

3.5

—

170

—

3.8

—

350

—

150

—

1.7

—

250

—

120

0.9

300

Unit

Vdc

Vdc

Vdc

—

MHz

pF

pF

Vdc

ns

µs

ns

µs

ns

ns

µs

ns

ns

µs

ns

2

Motorola Bipolar Power Transistor Device Data

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