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BUL45 Datasheet PDF : 10 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BUL45/D
™ Designer's Data Sheet
NPN Silicon Power Transistor
t High Voltage SWITCHMODE Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power
supplies up to 50 Watts. Main features include:
• Improved Efficiency Due to:
— Low Base Drive Requirements (High and Flat DC Current Gain hFE)
— Low Power Losses (On–State and Switching Operations)
— Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ)
— Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A
• Full Characterization at 125°C
• Tight Parametric Distributions Consistent Lot–to–Lot
• BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
BUL45 *
BUL45F*
*Motorola Preferred Device
POWER TRANSISTOR
5.0 AMPERES
700 VOLTS
35 and 75 WATTS
MAXIMUM RATINGS
Rating
Symbol BUL45 BUL45F Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
VCEO
VCES
VEBO
IC
ICM
IB
VISOL
PD
400
700
9.0
5.0
10
2.0
—
4500
—
3500
—
1500
75
35
0.6
0.28
Vdc
Vdc
Vdc
Adc
Adc
Volts
Watts
W/°C
BUL45
CASE 221A–06
TO–220AB
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
THERMAL CHARACTERISTICS
Rating
Symbol MJE18006 MJF18006
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
1.65
3.55
RθJA
62.5
62.5
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
°C
Unit
°C/W
Min
BUL45F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
—
—
100
µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
ICES
—
—
10
µAdc
—
—
100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
IEBO
—
—
100
µAdc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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