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MJ10012 Datasheet PDF : 6 Pages
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MJ10012 MJH10012
1
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.02
0.05 0.01
0.03
0.02 SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1
RθJC(t) = r(t) RθJC
P(pk)
RθJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
2
5 10 20
t, TIME (ms)
50 100 200
500 1,000 2,000
Figure 9. Thermal Response
50
20
100 µs
10
MJ10012
5
5.0 ms
MJH10012
2
1.0 ms
1
0.2
0.1
0.01
0.005
5
dc
TC = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10
20 30 50 70 100
200 300 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25_C, TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
100
SECOND BREAKDOWN
DERATING
80
60 THERMAL DERATING
20
MJH10012
MJ10012
0
0
40
80
120
160
200
TC, CASE TEMPERATURE (°C)
Figure 11. Power Derating
VCC = 12 Vdc
10 Vdc
10 mH
STANCORE
1.5
C2688
VZ = 400 V
0 Vdc
t1
5 ms
20 1N4933
0.3
220
2N5881
T.U.T.
µF
27
t1 to be selected such that IC reaches 6 Adc before switch-off.
NOTE: “Usage Test,” Figure 12 specifies energy handling
capabilities in an automotive ignition circuit.
Figure 12. Usage Test Circuit
4
Motorola Bipolar Power Transistor Device Data
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