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PZT2222AT1G Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
PZT2222AT1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
PZT2222AT1G Datasheet PDF : 5 Pages
1 2 3 4 5
Vi
0
tr
tp
PZT2222A
90%
10%
Vi
VCC
R2
R1
Vo
D.U.T.
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Vi = 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W.
PULSE GENERATOR:
PULSE DURATION
RISE TIME
DUTY FACTOR
tp 3 200 ns
tr 3 2 ns
d = 0.02
OSCILLOSCOPE:
INPUT IMPEDANCE
INPUT CAPACITANCE
RISE TIME
Zi > 100 kW
Ci < 12 pF
tr < 5 ns
Vi
+16.2 V
VCC
R2
0
TIME
- 13.8 V
tf
100 ms
D.U.T.
R1
Vi
D1
VBB
R3
Vo
OSCILLOSCOPE
R4
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
TYPICAL CHARACTERISTICS
1
IC/IB = 10
0.1 TA = 25°C
TA = 55°C
TA = 150°C
0.01
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 IC/IB = 10
1.0
0.9 TA = 55°C
0.8
0.7 TA = 25°C
0.6
0.5
0.4 TA = 150°C
0.3
0.2
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
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3

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