2SD1781K Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD1781K Datasheet PDF : 4 Pages
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Transistors
2SD1781K
1000
1000
Ta=25°C
500
500
lC/lB=10
200
100
50
IC/IB=50
20
20
10
10
5
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
200
100
Ta=100°C
25°C
50
−55°C
20
10
5
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current ( )
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
1000
500
Ta=25°C
VCE=5V
200
100
50
20
10
−1 −2 −5 −10 −20 −50 −100 −200
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product vs.
emitter current
100
Ta=25°C
f=1MHz
IE=0A
50
20
10
5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Ta=25°C
200
f=1MHz
IC=0A
100
50
20
10
5
0.1 0.2 0.5 1.0 2.0 5.0 10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/3
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