2SD1781K Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD1781K

Medium Power Transistor (32V, 0.8A)

ROHM Semiconductor 

Transistors

2SD1781K

zElectrical characteristics (Ta=25qC)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

Cob

Min.

40

32

5

−

−

−

120

−

−

Typ.

−

−

−

−

−

0.1

−

150

15

Max.

−

−

−

0.5

0.5

0.4

390

−

−

Unit

V

V

V

μA

μA

V

−

MHz

pF

Conditions

IC=50μA

IC=1mA

IE=50μA

VCB=20V

VEB=4V

IC/IB=500mA/50mA

VCE=3V, IC=100mA

VCE=5V, IE= −50mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

zPackaging specifications and hFE

Type

Package

Code

Basic ordering

hFE unit (pieces)

2SD1781K QR

Taping

T146

3000

hFE values are classified as follows :

Item

Q

R

hFE

120 to 270 180 to 390

zElectrical characteristic curves

1000

500

200

100

50

Ta=25°C

VCE=6V

20

10

5

2

1

0.5

0.2

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter propagation

characteristics

400

Tc=25°C

1mA

900μA

300

800μA

700μA

600μA

200

500μA

400μA

300μA

100

200μA

100μA

0

IB=0μA

0

2

4

6

8

10

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Grounded emitter output

characteristics

1000

500

200

100

50

Ta=100°C

25°C

−55°C

VCE=5V

20

10

1 2 5 10 20 50 100 200 500 1000

COLLECTOR CURRENT : IC (mA)

Fig.3 DC current gain vs. collector

current

Rev.A

2/3

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