FPNH10 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FPNH10 Datasheet PDF : 7 Pages
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Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
100
Vce = 5V
80
125 °C
60
25 °C
40
20
- 40 °C
0
0.1 0.2 0.5 1 2
5 10 20 50
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1
β = 10
0.9
0.8
- 40 °C
25 °C
0.7
0.6
125 °C
0.5
0.4
0.3
0.1
1
10 20
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 30V
1
0.1
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE ( °C)
NPN RF Transistor
(continued)
Collector-Emitter Saturation
Voltage vs Collector Current
0.2
β = 10
0.15
125 °C
0.1
25 °C
0.05
- 40 °C
0.1
1
10 20
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
25 °C
125 °C
0.6
0.4
0.2
0.01
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
P 42
Po we r D iss ip ation
vs. Amb ien t Tem pe ra ture
35 0
30 0
25 0
TO-9 2
20 0
15 0
10 0
50
0
0
25
50
75
10 0 12 5 15 0
T A - T EMPE RATUR E ( oC)
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