FPNH10 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

FPNH10

NPN RF Transistor

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

NPN RF Transistor

(continued)

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0

25

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100 µA, IE = 0

30

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µA, IC = 0

3.0

ICBO

Collector Cutoff Current

VCB = 25 V, IE = 0

IEBO

Emitter Cutoff Current

VEB = 2.0 V, IC = 0

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 4.0 mA, VCE = 10 V

60

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 4.0 mA, IB = 0.4 mA

IC = 4.0 mA, VCE = 10 V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

Ccb

Crb

rb’Cc

Collector-Base Capacitance

Common-Base Feedback

Capacitance

Collector Base Time Constant

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

IC = 4.0 mA, VCE = 10 V,

f = 100 MHz

VCB = 10 V, IE = 0, f = 1.0 MHz

VCB = 10 V, IE = 0, f = 1.0 MHz

IC = 4.0 mA, VCB = 10 V,

f = 31.8 MHz

650

0.34

100

100

0.5

0.95

0.720

0.65

9.0

V

V

V

nA

nA

V

V

MHz

pF

pF

ps

Spice Model

NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11

Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n

Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)

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