715(2002) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

715
(Rev.:2002)

NPN MEDIUM POWER TRANSISTORS

STMicroelectronics 

STF715 - STN715

THERMAL DATA

Rthj-amb • Thermal Resistance Junction-ambient

• Device mounted on a PCB area of 1 cm2.

Max

SOT-223

78

SOT-89

89

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICES Collector Cut-off

Current (VBE = 0)

ICEO

Collector Cut-off

Current (IB = 0)

IEBO

Emitter Cut-off Current

(IC = 0)

VCEO(sus)∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

VCE(sat)∗ Collector-Emitter

Saturation Voltage

VCE = 140 V

VCE = 80 V

VEB = 5 V

IC = 10 mA

IC = 100 mA

IC = 1 A

IB = 10 mA

IB = 100 mA

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 100 mA

IC = 1 A

IB = 10 mA

IB = 100 mA

hFE∗ DC Current Gain

IC = 100 mA

IC = 500 mA

IC = 1 A

VCE = 2 V

VCE = 2 V

VCE = 2 V

fT

Transition Frequency IC = 0.1 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

VCE = 10 V

Min. Typ.

80

140

80

40

50

Max.

500

1

100

0.25

0.5

1

1.1

Unit

µA

mA

µA

V

V

V

V

V

MHz

2/5

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