SA1282F Hoja de datos, SA1282F PDF - DATSAHEETQ

SA1282F

Hoja de datos

Fabricante

Número de pieza

componentes Descripción

Ver

Isahaya Electronics

FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

Match & Start : SA1282F

Kyocera Kinseki Corpotation

Schottky Barrier Diode

Nihon Inter Electronics

SBD

Kyocera Kinseki Corpotation

Schottky Barrier Diode

National Instruments Corporation

SBD

Kyocera Kinseki Corpotation

Schottky Barrier Diode

Powerex

Intellimod™ Module Single Phase IGBT Inverter Output

Paradigm Technology

128K x 16 CMOS 3.3V Static RAM

Integrated Device Technology

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

HIROSE ELECTRIC

GT9P-19P-2.54DSA12

Developed for Equipment Exposed to Harsh Environmental Conditions

HIROSE ELECTRIC

GT9P-16P-2.54DSA12

Developed for Equipment Exposed to Harsh Environmental Conditions

HIROSE ELECTRIC

GT9P-12P-2.54DSA12

Developed for Equipment Exposed to Harsh Environmental Conditions

HIROSE ELECTRIC

GT9P-25P-2.54DSA12

Developed for Equipment Exposed to Harsh Environmental Conditions

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