![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Cree](/logo/Cree.png)
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
![Infineon](/logo/Infineon.png)
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz