Fabricante
Número de pieza
componentes Descripción
Ver
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz
Infineon Technologies
High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz