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Número de pieza
componentes Descripción
NE41632-1
Hoja de datos
coincide,
conparecido a
NE41632-1
(1)
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
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NEC => Renesas Techn...
Fabricante
Número de pieza
componentes Descripción
Ver
NEC => Renesas Technology
NE41632-1
NPN MEDIUM POWER UHF-VHF TRANSISTOR
PDF
Match & Start :
NE4
1632-1
NEC => Renesas Technology
NE4
210M01-T2
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Ver
NEC => Renesas Technology
NE4
34S01-T1B
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Ver
NEC => Renesas Technology
NE4
210S01-T1
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Ver
NEC => Renesas Technology
NE4
25S01-T1B
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Ver
NEC => Renesas Technology
NE4
210M01-T1
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Ver
NEC => Renesas Technology
NE4
210S01-T1B
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Ver
California Eastern Laboratories.
NE4
6134-T1-AZ
NPN MEDIUM POWER MICROWAVE TRANSISTOR
Ver
California Eastern Laboratories.
NE4
6234-T1-AZ
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
Ver
California Eastern Laboratories.
NE4
210S01-T1B
SUPER LOW NOISE HJ FET
Ver
Renesas Electronics
NE4
61M02-T1-AZ
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
Ver
California Eastern Laboratories.
NE4
61M02-T1-AZ
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Ver
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