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GA20SICP12-263

   Hoja de datos
coincide,
conparecido a
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
ALL
GeneSiC Semiconducto...
Fabricante
Número de pieza
componentes Descripción
Ver
GENESIC
GeneSiC Semiconductor, Inc.
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
PDF
GENESIC
GeneSiC Semiconductor, Inc.
Normally – OFF Silicon Carbide Junction Transistor
PDF
Match & Start : GA20SICP12-263
Microsemi
Microsemi Corporation
SCRs Nanosecond Switching, Planar
Ver
Microsemi
Microsemi Corporation
SCRs Nanosecond Switching, Planar
Ver
Microsemi
Microsemi Corporation
SCRs Nanosecond Switching, Planar
Ver
Microsemi
Microsemi Corporation
SCRs Nanosecond Switching, Planar
Ver
IR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Ver
IR
International Rectifier
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Ver
IR
International Rectifier
High Side Switch Chopper Module Ultra-Fast™ Speed IGBT
Ver
Vishay
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
Ver
IR
International Rectifier
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
Ver
IR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Ver
ETC1
Unspecified
PCB Mounted Pressure Transducers for Volume OEM Applications
Ver
IR
International Rectifier
HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Ver
ETC
Unspecified
PCB Mounted Pressure Transducers Amplified Output Differential and Gage Temperature Compensated
Ver
Vishay
Vishay Semiconductors
Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A
Ver
IR
International Rectifier
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
Ver
123
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