MITSUBISHI ELECTRIC

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

Usha Ltd

Transistor. Low frequency, Low Noise Amplifier / Collector-base voltage Vcbo = 30V

PerkinElmer Inc

Channel photomultiplexer

Hamamatsu Photonics

PSD signal processing circuit

Hamamatsu Photonics

Driver circuit for Si photodiode array

Usha Ltd

Transistors, pre-amplifier, low lewel & low noice, 50V, 100mA, 450mW

Usha Ltd

Transistor. AM converter, FM/RF amplifier of low noise. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 25mA.

Hamamatsu Photonics

Driver circuit for CMOS linear image sensor

KEC

EPITAXIAL PLANAR NPN TRANSISTOR

Hamamatsu Photonics

Si photodiode evaluation circuit

Usha Ltd

Transistors

KEC

EPITAXIAL PLANAR PNP TRANSISTOR

Unspecified

Transistors

Hamamatsu Photonics

Photosensor amplifier