C838 Hoja de datos, C838 PDF

C838

Hoja de datos

Fabricante

Número de pieza

componentes Descripción

Ver

Usha Ltd

C838

Transistor. FM radio RF amp, mix. conv, osc, IF amp

PDF

Samsung

C838

NPN EPITAXIAL SILICON TRANSISTOR

PDF

Match & Start : C838

Samsung

C838

NPN EPITAXIAL SILICON TRANSISTOR

Ver

Usha Ltd

C838

Transistor. FM radio RF amp, mix. conv, osc, IF amp

Ver

Usha Ltd

C839

Transistor. FM/AM radio RF amp, conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 100mA.

Ver

Hamamatsu Photonics

C8366

Photosensor amplifier

Ver

Hamamatsu Photonics

C8366_2006

Photosensor amplifier

Ver

Intel

C8398

COMMERCIAL/EXPRESS HMOS MICROCONTROLLER

Ver

Toshiba

C8303

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)

Ver

Vishay Semiconductors

C83401

Thin Film Resistor Network Military, MIL-PRF-83401 Qualified, Type RZ070, RZ080, RZ090, RZ210, RZ220, RZ230, Single-In-Line SIP

Ver

Intel

C83C251

HIGH-PERFORMANCE CHMOS MICROCONTROLLER

Ver

Hamamatsu Photonics

C8366-01

Photosensor amplifier

Ver

Intel

C83C251TQ

HIGH-PERFORMANCE CHMOS MICROCONTROLLER

Ver

Intel

C83C251SA

HIGH-PERFORMANCE CHMOS MICROCONTROLLER

Ver

Intel

C83C251TB

HIGH-PERFORMANCE CHMOS MICROCONTROLLER

Ver

Intel

C83C251SB

HIGH-PERFORMANCE CHMOS MICROCONTROLLER

Ver

Intel

C83C251SP

HIGH-PERFORMANCE CHMOS MICROCONTROLLER

Ver

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