BCR35PN Hoja de datos, BCR35PN PDF - DATSAHEETQ

BCR35PN

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Siemens AG

NPN/PNP Silicon Digital Tansistor Array

Infineon Technologies

BCR35PN_2001

NPN/PNP Silicon Digital Transistor Array

Infineon Technologies

BCR35PN_2011

NPN/PNP Silicon Digital Transistor Array

Infineon Technologies

NPN/PNP Silicon Digital Transistor Array

Match & Start : BCR35PN

MITSUBISHI ELECTRIC

LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

Powerex

LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Renesas Electronics

Triac Low Power Use

Powerex

LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Mitsumi

LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

Renesas Electronics

Triac Low Power Use

Kersemi Electronic Co., Ltd.

Triac Low Power Use

Renesas Electronics

Triac Low Power Use

Powerex

Triac 30 Ampere/400-600 Volts

Renesas Electronics

Triac Low Power Use

Kersemi Electronic Co., Ltd.

Triac Low Power Use

Kersemi Electronic Co., Ltd.

Triac Low Power Use

Powerex

LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Powerex

Triac 30 Ampere/400-600 Volts

Renesas Electronics

Triac Low Power Use (The product guaranteed maximum junction temperature of 150°C)

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