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Número de pieza
componentes Descripción
BB1110RC13
Hoja de datos
coincide,
conparecido a
BB1110RC13
(1)
comienza con
N/A
termina en
N/A
Incluido
N/A
Fabricante
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BI Technologies
Fabricante
Número de pieza
componentes Descripción
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BI Technologies
BB1110RC13
Resistor capacitor network Thick film resistors Ceramic chip capacitors
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BB1
110RC13
NEC => Renesas Technology
BB1
A3M
COMPOUND TRANSISTOR
Ver
Renesas Electronics
BB1
01M
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
NXP Semiconductors.
BB1
49_
RF Manual 16th edition
Ver
Unspecified
BB1
05G
Dioda pojemnociowa (WARIKAP)
Ver
Leshan Radio Company
BB1
82B
VHF variable capacitance diode
Ver
Hitachi -> Renesas Electronics
BB1
01C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
NEC => Renesas Technology
BB1
F3P
COMPOUND TRANSISTOR
Ver
Renesas Electronics
BB1
02C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
NXP Semiconductors.
BB1
45B
Low-voltage variable capacitance diode
Ver
NXP Semiconductors.
BB1
78_
RF Manual 16th edition
Ver
NXP Semiconductors.
BB1
31_
RF Manual 16th edition
Ver
NXP Semiconductors.
BB1
99_
RF Manual 16th edition
Ver
Hitachi -> Renesas Electronics
BB1
01M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Ver
NEC => Renesas Technology
BB1
L3N
COMPOUND TRANSISTOR
Ver
Unspecified
BB1
05A
Dioda pojemnociowa (WARIKAP)
Ver
1
2
3
4
5
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9
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11
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