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Número de pieza
componentes Descripción
2SC5812W
Hoja de datos
coincide,
conparecido a
N/A
comienza con
2SC5812W
G
*
(1)
termina en
N/A
Incluido
N/A
Fabricante
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Renesas Electronics
Fabricante
Número de pieza
componentes Descripción
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Renesas Electronics
2SC5812W
G-TR-E
Silicon NPN Epitaxial VHF/UHF wide band amplifier
PDF
Match & Start :
2SC581
2W
Isahaya Electronics
2SC581
5
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
Ver
Isahaya Electronics
2SC581
5_09
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE
Ver
Panasonic Corporation
2SC581
300L
Silicon NPN epitaxial planar type
Ver
Renesas Electronics
2SC581
2WG-TR-E
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Ver
Toshiba
2SC581
0(TE12L,F)
TOSHIBA Transistor Silicon NPN Epitaxial Type
Ver
Toshiba
2SC581
0(TE12L,F)
_
2009
TOSHIBA Transistor Silicon NPN Epitaxial Type
Ver
Toshiba
2SC581
9(TE12L,F)
TOSHIBA Transistor Silicon NPN Epitaxial Type
Ver
1
2
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