2SK2723 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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2SK2723 Datasheet PDF : 8 Pages
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2SK2723
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
Drain to Source
On-state Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
RDS (on) 1
RDS (on) 2
VGS (off)
y fs
IDSS
IGSS
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
QG
QGS
QGD
VF (S-D)
tr r
Qr r
TEST CONDITIONS
VGS = 10 V, ID = 13 A
VGS = 4 V, ID = 13 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 13 A
VDS = 60 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 13 A
VGS (on) = 10 V
VDD = 30 V
RG = 10 Ω
ID = 25 A
VDD = 48 V
VGS = 10 V
IF = 25 A, VGS = 0
IF = 25 A, VGS = 0
di/dt = 100 A/µs
MIN.
1.0
8.0
TYP.
28
45
1.6
18
830
430
185
21
185
100
110
35
2.8
15
1.0
60
125
MAX.
40
60
2.0
10
±10
UNIT
mΩ
mΩ
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Switching Time
D.U.T
RG
PG.
RG = 10 Ω
VGS
0
t
t = 1µs
Duty Cycle ≤ 1 %
RL
VGS
VGS
Wave Form
0 10 %
VDD
90 %
VGS (on)
ID
90 %
ID
ID
Wave Form
0 10 %
90 %
10 %
td (on)
tr
td (on)
tr
ton
toff
Test Circuit 2 Gate Charge
D.U.T
IG = 2 mA
RL
PG.
50 Ω
VDD
2
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