2SK2723 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
2SK2723 Datasheet PDF : 8 Pages
| |||
DATA SHEET
MOS Field Effect Power Transistors
2SK2723
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching spplications.
PACKAGE DIMENSIONS
(in millimeter)
10.0 ± 0.3
4.5 ± 0.2
3.2 ± 0.2
2.7 ± 0.2
FEATURES
• Low On-Resistance
RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A)
RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A)
• Low Ciss Ciss = 830 pF Typ.
• Built-in G-S Protection Diode
• Isolated TO-220 Package
0.7 ± 0.1
2.54
1.3 ± 0.2
1.5 ± 0.2
2.54
2.5 ± 0.1
0.65 ± 0.1
123
1.Gate
2.Drain
3.Source
MP-45F (ISOLATED TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID (DC)
±25
A
Drain Current (pulse)*
ID (pulse)
±100
A
Total Power Dissipation (TA = 25 °C) PT
2.0
W
Total Power Dissipation (Tc = 25 °C) PT
25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
*PW ≤ 10 µs, Duty Cycle ≤ 1%
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice.
Document No. D10623EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
©
1994
Share Link: 