2SK3523-01R
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
2.5
min.
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
Ciss
100
10-1
Coss
10-2
Crss
10-3
10-1
100
101
102
103
VDS [V]
Typical Switching Characteristics vs. ID
103 t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
102
td(on)
101
tr
td(off)
tf
100
10-1
100
101
102
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=21A, Tch=25°C
24
22
Vcc= 250V
20
18
Vcc= 100V
16
Vcc= 400V
14
12
10
8
6
4
2
0
0
20
40
60
80
100 120
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=50V
AS
1000
800 I =10A
AS
600
I =15A
AS
400
I =25A
AS
200
0
0
25
50
75
100
125
150
starting Tch [°C]
3