3NF06L Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

3NF06L

N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET™ II Power MOSFET

STMicroelectronics 

STN3NF06L

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 4 A, VGS=0

ISD= 4 A,

di/dt = 100 A/µs,

VDD=25 V, Tj=150 °C

(see Figure 16)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max Unit

4

A

16 A

1.5 V

50

ns

88

nC

3.5

A

5/12

Share Link: