NE27200 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
NE27200 Datasheet PDF : 8 Pages
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CHIP DIMENSIONS (Unit: µm)
NE32500, NE27200
5.5
13
58 36.5 66
25
Drain
Source
Source
Gate
25
66
13
49.5 43
350
Thickness = 140 µm
: BONDING AREA
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
100
200
80
150
60
100
40
50
20
0
50
100
150
200
250
0
TA – Ambient Temperature – ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
–0.2 V
–0.4 V
1.5
VDS – Drain to Source Voltage – V
–0.6 V
–0.8 V
3.0
2
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