s Electro-optical Characteristics
Parameter
Input
Forward voltage
Terminal capacitance
PC3H4
Collector dark current
PC3Q64Q
Output
Collector-emitter PC3H4
breakdown voltage PC3Q64Q
Emitter-collector
breakdown voltage
Symbol
VF
Ct
ICEO
ICEO
BVCEO
BVCEO
BVECO
Collector current
IC
Transfer
charac-
teristics
Collector-emitter
saturation voltage
Isolation resistance
Floating capacitance
Response time
Rise time
Fall time
VCE(sat)
RISO
Cf
tr
tf
Conditions
IF=±20mA
V=0, f=1kHz
VCE=50V, IF=0
VCE=20V, IF=0
IC=0.1mA, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IF=±1mA
VCE=5V
IF=±20mA
IC=1mA
DC500V
40 to 60%RH
V=0, f=1MHz
VCE=2V
IC=2mA
RL=100Ω
PC3H4/PC3Q64Q
MIN.
−
−
−
−
70
35
6
TYP.
1.2
30
−
−
−
−
−
(Ta=25˚C)
MAX. Unit
1.4
V
250
pF
100 nA
100 nA
−
V
−
V
−
V
0.2
−
4.0 mA
−
0.1
0.2
V
5×1010 1×1011
−
Ω
−
0.6
1.0
pF
−
4
18
µs
−
3
18
µs
Fig.1 Forward Current vs. Ambient
Temperature
60
50
40
30
20
10
0
−30
0 25 50 55 75 100 125
Ambient temperature Ta (°C)
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
100
80
70
60
40
20
0
−30
0
50 55
100
Ambient temperature Ta (°C)