CHM62A3PAPT Ver la hoja de datos (PDF) - CHENMKO CO., LTD.

Número de pieza

componentes Descripción

Fabricante

CHM62A3PAPT

SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( CHM62A3PAPT )

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

I GSSF

I GSSR

Gate-Body Leakage

Gate-Body Leakage

VGS = 0 V, ID = 250 µA

VDS = 30 V, VGS = 0 V

VGS = 20V,VDS = 0 V

VGS = -20V, VDS = 0 V

30

V

1

µA

+100 nA

-100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

g FS

Forward Transconductance

VDS = VGS, ID = 250 µA

VGS=10V, ID=14A

VGS=4.5V, ID=11A

VDS =5V, ID = 12A

1

3

V

9.5 11.5

mΩ

13 16

26

S

SWITCHING CHARACTERISTICS (Note 4)

Qg Total Gate Charge

Qgs Gate-Source Charge

Q gd Gate-Drain Charge

t on

Turn-On Time

tr

Rise Time

t off

Turn-Off Time

tf

Fall Time

VDS=10V, ID=14A

VGS=10V

VDD= 15V

ID = 14A, VGS= 10 V

RGEN= 6 Ω

35 42

6

nC

11

19 48

36 72

nS

97 175

68 135

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Drain-Source Diode Forward Current

V SD

Drain-Source Diode Forward Voltage IS = 2.3A, VGS= 0 V

55

A

1.3 V

Share Link: