NE350184C-T1 Ver la hoja de datos (PDF) - California Eastern Laboratories.

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NE350184C-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

California Eastern Laboratories. 

NE350184C

RECOMMENDED OPERATING CONDITIONS (TA = +25°C)

Parameter

Drain to Source Voltage

Drain Current

Input Power

Symbol

VDS

ID

Pin

MIN.

1

5

−

TYP.

2

10

−

MAX.

3

15

0

Unit

V

mA

dBm

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cutoff Voltage

Transconductance

Noise Figure

Associated Gain

Symbol

Test Conditions

IGSO VGS = −3 V

IDSS VDS = 2 V, VGS = 0 V

VGS (off) VDS = 2 V, ID = 100 µA

gm

VDS = 2 V, ID = 10 mA

NF VDS = 2 V, ID = 10 mA, f = 20 GHz

Ga

MIN. TYP. MAX. Unit

−

−

10

µA

15

−

70

mA

−0.2

−

−2.0

V

40

−

−

mS

−

0.7

1.0

dB

11

13.5

−

dB

2

Data Sheet PG10584EJ01V0S

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