DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

THN6301S Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Fabricante
THN6301S
ETC
Unspecified ETC
THN6301S Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
THN6301 Series
Electrical Characteristics ( TA = 25 )
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
ICEO
VCB = 19 V, IE = 0 mA
VCE = 12 V, IB = 0 mA
IEBO Emitter Cut-off Current
VEB = 1 V, IC = 0 mA
hFE DC Current Gain
VCE = 8 V, IC = 15 mA
fT Transition Frequency
VCE = 8 V, IC = 15 mA
CCB Collector to Base Capacitance VCB = 10 V, f = 1 MHz
|S21|2 Insertion Power Gain
MAG Maximum Available Gain
NFmin Minimum Noise Figure
rn Noise Resistance
GA Associated Gain
OIP3 Output 3rd Order Intercept
VCE = 8 V, IC = 7 mA, f = 1 GHz
VCE = 8 V, IC = 15 mA, f = 1 GHz
VCE = 8 V, IC = 7 mA, f = 1 GHz
VCE = 8 V, IC = 15 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 15 mA, f = 1 GHz
VCE = 8 V, IC = 15 mA, f = 1 GHz
Value
Min. Typ. Max. Unit
-
-
0.5 uA
-
-
5 uA
-
-
0.5 uA
80 150 300
-
10
- GHz
- 0.55
10 12.5
12 14.5
15 16.5
16 18
-
1.1
- 0.09
- 14.5
- 15.5
-
27
- pF
-
dB
-
-
dB
-
- dB
-
-
dB
-
- dBm
www.tachyonics.co.kr
- 2/11 -
Aug.-2005
Rev 2.0

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]