THN6301S Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

THN6301S

NPN SiGe RF TRANSISTOR

Unspecified 

NPN SiGe RF TRANSISTOR

□ Application

LNA and wide band amplifier up to GHz range

SOT 523

THN6301 Series

Unit in mm

□ Features

o Low Noise Figure

NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA

o High Power Gain

MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA

o High Transition Frequency

fT = 10 GHz Typ. @ VCE = 8 V, IC = 15 mA

□ hFE Classification

Marking AA1

AA2

hFE 125 to 300 80 to 160

□ Absolute Maximum Ratings

Pin Configuration

Pin No

Symbol

1

B

2

E

3

C

Description

Base

Emitter

Collector

□ Available Package

Product

Package

THN6301S SOT23

THN6301U SOT323

THN6301Z SOT343

THN6301E SOT523

THN6301KF SOT623F

Unit : mm

Dimension

2.9ⅹ1.3, 1.2t

2.0ⅹ1.25, 1.0t

2.0ⅹ1.25, 1.0t

1.6ⅹ0.8, 0.8t

1.4ⅹ0.8, 0.6t

Symbol

Parameter

VCBO Collector to Base Breakdown Voltage

VCEO

VEBO

Ic

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Current (DC)

PT Total Power Dissipation

TSTG Storage Temperature

TJ Operating Junction Temperature

Caution : ESD sensitive device

Ratings

Unit

25

V

12

V

2.5

V

65

mA

150

mW

-65 ~ 150

℃

150

℃

www.tachyonics.co.kr

- 1/11 -

Aug.-2005

Rev 2.0

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