DHG20I600PA Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
DHG20I600PA Datasheet PDF : 5 Pages
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Fast Diode
40
30
IF
20
[A]
10
TVJ = 125°C
TVJ = 25°C
0.8
0.7
0.6
Qrr
0.5
[μC]
0.4
0.3
TVJ = 125°C
VR = 300 V
DHG20I600PA
preliminary
20
TVJ = 125°C
40 A
VR = 300 V
20 A
40 A
16
10 A
20 A
IRM
12
10 A
[A]
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF [V]
Fig. 1 Typ. Forward current
versus VF
0.2
200
400
600
800
diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus di/dt
Fig. 4 Dynamic parameters
Qrr, IRM versus TVJ
160
140
TVJ = 125°C
VR = 300 V
120
100
trr 80
[ns] 60
40 A
40
20 A
10 A
20
0
200
400
600
800
diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus di/dt
4
200
400
600
800
diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus di/dt
Fig. 6 Typ. recovery energy
Erec versus di/dt
1
ZthJC
[K/W]
0.1
0.001
0.01
0.1
Ri
ti
1 0.231 0.0005
2 0.212 0.004
3 0.19 0.02
4 0.267 0.15
1
10
tP [s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
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