SI4420BDY-T1-E3 Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
SI4420BDY-T1-E3 Datasheet PDF : 9 Pages
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SI4420BDY-T1-E3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
5
VGS = 10 thru 4 V
40
4
30
3
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TC = - 55 °C
20
VGS = 3 V
10
0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.012
0.010
VGS = 4.5 V
0.008
0.006
VGS = 10 V
0.004
0.002
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 11 A
8
6
VDS = 15 V
VDS = 24 V
4
2
2
TC = 25 °C
1
TC = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
900
Ciss
600
300
Coss
0 Crss
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 11 A
1.5
VGS = 10 V
1.2
VGS = 4.5 V
0.9
0
0
4
8
12
16
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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