KF5N60P Ver la hoja de datos (PDF) - KEC
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KF5N60P Datasheet PDF : 7 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KF5N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF5N60P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·VDSS= 600V, ID= 4.5A
·Drain-Source ON Resistance : RDS(ON)=2.0Ω @VGS = 10V
·Qg(typ) = 12nC
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
RATING
SYMBOL
KF5N60P
KF5N60F
UNIT
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
±30
@TC=25℃
Drain Current @TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
ID
IDP
EAS
EAR
dv/dt
PD
4.5
4.5*
2.7
2.7*
13
13*
140
3.5
4.5
83
38
0.67
0.3
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55～150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.5
3.3
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
PIN CONNECTION
(KF5N60P, KF5N60F)
D
A
E
I
O
C
F
G
B
Q
K
P
M
L
D
NN
J
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF5N60F
A
C
E
L
M
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
* Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E
3.18 +_ 0.1
F
3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
S
2010. 11. 4
Revision No : 0
1/7
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