KF3N60I Ver la hoja de datos (PDF) - KEC
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KF3N60I Datasheet PDF : 7 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·VDSS= 600V, ID= 2.3A
·Drain-Source ON Resistance : RDS(ON)=3.3Ω @VGS = 10V
·Qg(typ) = 8.5nC
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
Drain Current @TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
600
±30
2.3
1.46
7*
120
3.2
4.5
44.6
0.34
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
150
-55～150
Thermal Resistance, Junction-to-Case RthJC
2.8
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
KF3N60D
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
A
C
M
N
G
FF
123
KF3N60I
H
J
P
L
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
C
5.34 +_0.3
D
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N 0.96 MAX
P
1.02 +_ 0.3
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
D
IPAK(1)
G
S
2012. 7. 12
Revision No : 1
1/7
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